2SD1170 NPN TRANSISTOR Silicon NPN Darlington Power Transistor

Transistor NPN 2SD1170 Ideal for automotive electronics applications DarlingtonTransistor ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • High DC Current Gain- : hFE= 2000( Min.) @(IC= 3A, VCE= 2V)